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64AA0.04-9 SMD | Фотодиоды 64 Element APD Array for NIR Detection | datasheet | Pacific Silicon Sensor | Avalanche Photodiode Arrays | 200 V | 905 nm | 2 ns | BGA-68 | 0.3 nA | + 70 C | - 20 C | SMD/SMT | Bulk | 60 A/W | ||||||||
AD003B-9-TO5I | Фотодиоды Si APD Enhanced for 905nm.33mm Area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 120 V | 905 nm | 1 ns | 120 deg | TO-5i | 2 nA | + 70 C | - 20 C | Through Hole | 3E-14 W/sqrt Hz | Bulk | 1 uA | 60 A/W | 25 | 6 nA | 100 mW | ||
AD100-10-TO5I | Фотодиоды 500um active area APD chip w/ IR | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 220 V | 905 nm | 4 ns | TO-5i | 1.5 nA | + 70 C | - 10 C | Through Hole | 65 A/W | 10 nA | ||||||||
AD100-8-S1 | Фотодиоды AD100-8-S1 120-160V | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 120 V | 800 nm | 180 ps | 116 deg | TO-52-S1 | 50 pA | + 100 C | - 40 C | Through Hole | 0.3E-14 W/sqrt Hz | Bulk | 5 nA | 60 A/W | 50 | 100 pA | 100 mW | ||
AD1100-8-TO52-S1 | Фотодиоды High Speed Si APD 130um Active Area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 90 V | 800 nm | 1 ns | 92 deg | TO-52-S1 | 4 nA | + 100 C | - 40 C | Through Hole | 8E-14 W/sqrt Hz | Bulk | 1 uA | 50 A/W | 20 | 10 nA | 100 mW | ||
AD1100-9-TO52-S1 | Фотодиоды Si APD Enhanced for 905nm 1130um Area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 180 V | 905 nm | 1.3 ns | 92 deg | TO-52 | 4 nA | + 100 C | - 40 C | Through Hole | 8E-14 W/sqrt Hz | Bulk | 1 uA | 60 A/W | 20 | 10 nA | 100 mW | ||
AD1100-9-TO5I | Фотодиоды Si APD Enhanced for 905nm 1950um Area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 180 V | 905 nm | 1.3 ns | TO-5i | 4 nA | + 100 C | - 40 C | Through Hole | 8E-14 W/sqrt Hz | Bulk | 1 uA | 60 A/W | 20 | 10 nA | 100 mW | |||
AD1500-10-TO5I | Фотодиоды 1500um active area APD chip w/ IR | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 220 V | 1064 nm | 5 ns | TO-5i | 7 nA | + 70 C | - 15 C | Through Hole | 36 A/W | 90 nA | ||||||||
AD1500-TO5I | Фотодиоды APD with 1.77mm squared active area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 160 V | 905 nm | 2 ns | TO-5i | 2 nA | + 100 C | - 40 C | Through Hole | 58 A/W | 10 nA | ||||||||
AD1900-8-TO5I | Фотодиоды High Speed Si APD 1950um Active Area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 200 V | 800 nm | 1.4 ns | 96 deg | TO-5 | 15 nA | + 100 C | - 40 C | Through Hole | 15E-14 W/sqrt Hz | Bulk | 1 uA | 50 A/W | 10 | 20 nA | 100 mW | ||
AD1900-9-TO5I | Фотодиоды Si APD Enhanced for 905nm 1950um Area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 180 V | 800 nm | 1.4 ns | 96 deg | TO-5i | 15 nA | + 100 C | - 40 C | Through Hole | 15E-14 W/sqrt Hz | Bulk | 1 uA | 50 A/W | 20 | 20 nA | 100 mW | ||
AD230-12-TO52S1.1 | Фотодиоды APD with 0.04mm squared active area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 60 V | 660 nm | 0.18 ns | TO-52-S1 | 0.2 nA | + 100 C | - 40 C | Through Hole | 50 A/W | 1 nA | ||||||||
AD230-2.3G-TO5 | Фотодиоды High Speed Si APD w/2.3Ghz | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 200 V | 800 nm | 180 ps | 116 deg | TO-5 | 0.3 nA | + 60 C | 0 C | Through Hole | 1E-14 W/sqrt Hz | Bulk | 1 uA | 50 A/W | 10 | 1.5 nA | 360 mW | ||
AD230-8-S1 | Фотодиоды AD230-8-S1 120-160V | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 80 V | 800 nm | 180 ps | 113 deg | TO-52-S1 | 0.3 nA | + 100 C | - 40 C | Through Hole | 1E-14 W/sqrt Hz | Bulk | 1 uA | 50 A/W | 50 | 1.5 nA | 100 mW | ||
AD230-9-400M-TO5 | Фотодиоды Si APD Enhanced for 905nm 230um Area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 160 V | 905 nm | 500 ps | 116 deg | TO-5 | 0.5 nA | + 60 C | 0 C | Through Hole | 1E-14 W/sqrt Hz | Bulk | 100 nA | 60 A/W | 20 | 1.5 nA | 360 mW | ||
AD230-9-TO52-S1 | Фотодиоды AD230-9-TO52-S1 200-240V | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 160 V | 905 nm | 0.55 ns | 113 deg | TO-52-S1 | 0.5 nA | + 100 C | - 40 C | Through Hole | 1E-14 W/sqrt Hz | Bulk | 100 nA | 60 A/W | 50 | 1.5 nA | 100 mW | ||
AD2500-8-TO5I | Фотодиоды High Speed Si APD 2520um Active Area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 120 V | 800 nm | 1.5 ns | TO-5i | 20 nA | + 100 C | - 40 C | Through Hole | 30E-14 W/sqrt Hz | Bulk | 1 uA | 50 A/W | 10 | 30 nA | 100 mW | |||
AD2500-9-TO5I | Фотодиоды Si APD Enhanced for 905nm 2520um Area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 180 V | 905 nm | 1.5 ns | TO-5i | 20 nA | + 100 C | - 40 C | Through Hole | 30E-14 W/sqrt Hz | Bulk | 1 uA | 60 A/W | 20 | 30 nA | 100 mW | |||
AD3000-9-TO5I | Фотодиоды Si APD Enhanced for 905nm 3mm Area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 160 V | 905 nm | 2 ns | TO-5i | 30 nA | + 100 C | - 40 C | Through Hole | 45E-14 W/sqrt Hz | Bulk | 2 uA | 60 A/W | 20 | 30 nA | 100 mW | |||
AD500-1.3G-TO5 | Фотодиоды High Speed Si APD w/1.3Ghz Amplifier | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 200 V | 800 nm | 350 ps | 113 deg | TO-5 | 0.5 nA | + 60 C | 0 C | Through Hole | 2E-14 W/sqrt Hz | Bulk | 1 uA | 50 A/W | 50 | 2 nA | 360 mW | ||
AD500-12-TO52S1.1 | Фотодиоды APD with 0.2mm squared active area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 60 V | 660 nm | 0.35 ns | TO-52-S1 | 0.3 nA | + 100 C | - 40 C | Through Hole | 50 A/W | 2 nA | ||||||||
AD500-8-S1 | Фотодиоды AD500-8-S1 120-160V | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 80 V | 800 nm | 350 ps | 108 deg | TO-52-S1 | 0.5 nA | + 100 C | - 40 C | Through Hole | 2E-14 W/sqrt Hz | Bulk | 1 uA | 50 A/W | 50 | 2 nA | 100 mW | ||
AD500-9-400M-TO5 | Фотодиоды Si APD Enhanced for 905nm 500um Area | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 160 V | 905 nm | 550 ps | 113 deg | TO-5 | 0.5 nA | + 60 C | 0 C | Through Hole | 2E-14 W/sqrt Hz | Bulk | 100 nA | 60 A/W | 20 | 5 nA | 360 mW | ||
AD500-9-TO52-S1 | Фотодиоды AD500-9-TO52-S1 200-240V | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 160 V | 905 nm | 550 ps | 108 deg | TO-52-S1 | 0.5 nA | + 100 C | - 40 C | Through Hole | 2E-14 W/sqrt Hz | Bulk | 1 uA | 60 A/W | 50 | 5 nA | 100 mW | ||
AD800-10-TO5I | Фотодиоды 800um active area APD chip w/ IR | datasheet | Pacific Silicon Sensor | Avalanche Photodiodes | 220 V | 1064 nm | 5 ns | TO-5i | 3 nA | + 70 C | - 15 C | Through Hole | 36 A/W | 25 nA |
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